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| Transistor 2SB709A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD601A 2.8 -0.3 +0.2 Unit: mm s Features q q 0.650.15 +0.25 1.5 -0.05 0.650.15 0.95 1.1 -0.1 +0.2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg -45 -45 -7 -200 -100 200 150 -55 ~ +150 V V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT Cob * Conditions VCB = -20V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.40.2 0.8 Parameter Symbol Ratings Unit max - 0.1 -100 0.16 -0.06 s Absolute Maximum Ratings 2 (Ta=25C) +0.1 0.4 -0.05 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 3 +0.1 1.45 Unit A A V V V -45 -45 -7 160 - 0.3 80 2.7 460 - 0.5 VCE(sat) V MHz pF *1h FE Rank classification Rank hFE Q 160 ~ 260 BQ R 210 ~ 340 BR S 290 ~ 460 BS Marking Symbol 1 Transistor PC -- Ta 240 -120 Ta=25C 200 -100 -50 2SB709A IC -- VCE -60 VCE=-5V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 160 -80 IB=-300A -60 -250A -200A -40 -150A -100A -20 -50A Collector current IC (mA) -40 120 -30 80 -20 40 -10 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -150 -300 -450 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IB -- VBE -400 VCE=-5V Ta=25C -350 -200 -240 IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VCE=-5V 25C Ta=75C -25C VCE(sat) -- IC IC/IB=10 Base current IB (A) -300 -250 -200 -150 -100 -50 0 0 - 0.6 -1.2 -1.8 Collector current IC (mA) -160 - 0.3 25C - 0.1 Ta=75C -120 -25C -80 - 0.03 - 0.01 -40 - 0.003 - 0.001 -1 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 600 VCE=-10V 160 140 120 100 80 60 40 20 0 -1 0 0.1 VCB=-10V Ta=25C fT -- I E 8 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 -1 400 Ta=75C 300 25C -25C 200 100 -3 -10 -30 -100 -300 -1000 0.3 1 3 10 30 100 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor NF -- IE 6 VCB=-5V f=1kHz Rg=2k Ta=25C 20 18 16 VCB=-5V Rg=50k Ta=25C 2SB709A NF -- IE 300 hfe 100 h Parameter -- IE 5 Noise figure NF (dB) Noise figure NF (dB) h Parameter 4 14 12 10 8 6 4 2 10kHz hie (k) VCE=-5V f=270Hz Ta=25C 3 10 f=100Hz 1kHz 30 hoe (S) 3 10 2 1 3 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 10 1 0.1 hre 0.3 (!10-4) 1 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter -- VCE 300 hfe 100 IE=2mA f=270Hz Ta=25C h Parameter 30 hoe (S) 10 3 hre (!10-4) hie (k) 1 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) 3 |
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